K4B4G0846D-BYK0000
DRAM Chip DDR3 SDRAM 4G-Bit 512Mx8 1.35V 78-Pin F-BGA
| PARTS NO. | MFG | DATE CODE | QTY | DESC |
| K4B4G0846D-BYK0 | SAMSUNG | 2018+ | 93000 | ROHS & ORIGINAL PACKAGE |
Descriptions
JEDEC standard 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V)
Vddq = 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,933MHz fCK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency (posted CAS) : 11
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL) = 8 (DDR3-1600)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
Bi-directional Differential Data-Strobe
Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C < Tcase ≤ 95°C
Asynchronous Reset
Package: 78 balls FBGA -x8
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free
The 4Gb DDR3 SDRAM D-die is organized as a 512Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK\ falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS\) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS\/CAS\ multiplexing style. The DDR3 device operates with a single 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V) power supply and 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V) VDDQ. The 4Gb DDR3 D-die device is available in 78ball FBGAs (x8).
Key Features
